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查看: 11296|回復: 7

請問該如何驗證電晶體的hFE值

[複製鏈接]
發表於 2010-8-27 17:24:22 | 顯示全部樓層 |閱讀模式
請問一下,我想兜出一個驗證出DataSheet中"電晶體的hFE值"的實驗電路
拿9013 NPN 電晶體舉例好了 9013_datasheet.pdf (73.32 KB, 下載次數: 139)
00001.JPG

為了做出IC 50ma 的測試條件 我在C極放了80 ohm,可是我卻弄不出VCE=1V的條件
也不解"B極"的電路該怎麼接,也搞不懂HFE是怎樣讀出來的。
希望有大大能夠指教一下,謝謝
00002.JPG
發表於 2010-8-27 19:56:55 | 顯示全部樓層
我有一本古老的原文書:Applications of Operational Amplifiers 在 Amazon 書店可搜尋到,這張書皮也是由 Amazon 借來。其中有一章寫到 Op-amp 的特殊應用,節錄其中兩頁給您參考:

hFE_hfe_tester_1

hFE_hfe_tester_2

hFE_hfe_tester_3
(第三圖是由另一本電路圖集掃描下來的)
 樓主| 發表於 2010-8-27 21:49:53 | 顯示全部樓層

回復 2# 的帖子

感謝大大提供的資料,這份資料好深奧,讓我感到頭痛...(英文程度極差)
先key 出來翻譯在說...不過怎麼有好多單字遇到換行都會加上'-' 這符號呢?
慢慢消化.....

順便送上KEY 好的內容
6.1.1 Gain measurement   Curve tracer of bipolar transistor sets the base current for a commone-mitter configuration. Beta is then found by observing the resulting collector current. This is a poor bias approach for beta testing, as the magnitudes of the collector bias and signal cur-rents then vary with beta. Instead, it is better to measure beta at a spe-cific collector bias current and signal current. Beta is then determined from the resulting base current magnitude. Fixed collector bias and sig-nal currents are established in the beta test circuit of Fig. 6.1 by the feed-back around A1. In establishing these currents, A1 drives the transistor to maintain near-zero input voltage and current at the amplifier inputs. For zero input voltage, the commmon ends of R1 and R2 are at ground level,

        圖片1
Fig. 6.1 Static and dynamic current gains are measured with this cir-cuit at bias and signal levels set by independent control potentiometers.

and the entire input signals are impressed on these resistors. For zero amplifier input current, the currents from R1 and R2 all flow in the collec-tor. The dc and ac collector currents are then Ic = V/R1 and Ic = Ei/R2, respectively.
    The base current resulting from the above collector currents is sup-plied to A2 and flows in the feedback resistor R5. From this current an output voltage is generated equal to

        算式1

where hFE is the dc or static value for beta and hfe is the ac or dynamic value. Using the last result, the two current gains are expressed in terms of the dc and ac components of eo, Eo and Eo, by

        算式2

Amplifier A2 also serves as a convenient means of setting the collector-base bias VCB. From R3 a voltage is set at one amplifier input and is, thereby, set at the test transistor base. This base voltage establishes VCB, since the collector is held at zero voltage by A1. Then, from Fig. 6.1, VCB=-V1.
Using this circuit, low-frequency measurements can be made within the accuracy permitted by the temperature coefficient of beta. This tem-perature coefficient is about 0.5% .c near room temperature, and nor-mal ambient variations limit beta test accuracy to around 1 percent. Testaccuracy is also directly related to the accuracies of voltages V and Ei and of resistors R1,R2 and R5. At low currents an additional error in the test for hFE is the input bias current of A2, but this may be avoided by using an FET input operational amplifier. Further limitations on the hfe test are the amplifier bandwidth and stray capacitance shunting the high resistance of R5. These latter factors limit hfe testing to 10kHz or lower. By using a low test frequency with low-level tests, the stray ca-pacitance effects which often limit curve tracer measurement by hystere-sis looping are avoided.
發表於 2010-8-27 22:44:49 | 顯示全部樓層
0
發表於 2010-8-28 09:02:51 | 顯示全部樓層
這個小電路,也可以測hfe喔!很直覺就能利用表頭去看到,但有缺點........第一點,錶頭要找(還不知道容不容易找到),其二,製作好之後需要有其他儀器輔助,先知道電晶體的hfe值,然後再做調校、畫刻度的動作。

http://diy.cepark.com/html/67/n-1167.html

光想到這些缺點,我也很頭痛。http://bbs.pigoo.com/attachments/forumid_56/20100827_952700a1e677bf254867xx2j6WWSzUCK.gif
發表於 2010-8-28 10:13:04 | 顯示全部樓層

回復 5# 的帖子

看不出需要啥特別的儀器輔助耶 n_046| !以 hFE 為例,有個數位式三用錶、計算機就可克難的搞定,當然可將它再理想化,單純探討設計者的想法也是很有趣。n_131|
發表於 2010-8-28 10:50:03 | 顯示全部樓層
hfe 是直流放大倍率
9013是矽電晶體,屬於電流驅動型
根據貼圖的資料顯示
--------------------------------------------------------
Hfe1   Vce=1v   Ic=50ma   min=64
-------------------------解說--------------------------
直流放大倍率1  
該晶體導通後的ce腳位間有1v電壓降
Ic電流50ma時,直流放大倍率最小是64倍
把Ic電流(50ma)除以Hfe(64)就是Ib的最小輸入電流(0.78125ma)

也就是說
當你的Ic電流需要50ma的話
Ib輸入電流最小必須要有0.78125ma才可以
------------------------------------------------------
Vce=1V  
這個數據是半導體製程上所出現的接合面壓降
該數據會因為製程不同而有所不同
但是該數據是越低越好

你的測試電路是對的
VCC=5V  扣掉Vce 1v 還有4v
當Ib輸入0.78125ma時
電晶體導通80歐姆兩端會出現4v的電壓
此時Ic電流等於50ma

補充說明
因為電晶體的hfe有 min  typ  max 三種數據(大量製造無法做唯一標示)
為了保險起見
最好是以typ或是min做計算
發表於 2010-8-28 15:09:08 | 顯示全部樓層

回覆 6# 的帖子

也是.............設計出電路,又是另一種境界了。

如果要自己手動算,應該也不錯,像雄爸爸的說明一樣。
弄個簡單的直流偏壓,量一下電阻上的電壓,算出電流,就能估算出hfe了。

啊!我在5#忘記貼連結了,我說的內容,就是針對那篇連結的。
現在連結補在5#囉!
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